ПУБЛИКАЦИИ В СПИСАНИЯ:

І. Публикации в списания с импакт фактор:

1. P.Raatikainen, I.Kassamakov, R.Kakanakov et al, Fiber optic Liquid-level sensor, Sensors and Actuators A, V.58, p.93 (1997).
2. T.Marinova, A.Kakanakova-Georgieva, V.Krastev, R.Kakanakov, M.Neshev, L.Kassamakova et al, Nickel based ohmic contacts on SiC, Materials Science and Engineering B 46, p.223 (1997).
3. L.Bedikjan, P.Danesh, RF Plasma Treatment of Porous Silicon, Journal of Non-Crystalline Solids, Vol.220, No3, p.261 (1997).
4. C.Hallin, R.Yakimova, B.Pecz, A.Georgieva, Ts.Marinova, L.Kassamakova, R.Kakanakov et al, Improved Ni ohmic contact on n-type 4H-SiC, Journal of Electronic Materials, Vol.26, No 3, pp.119-122 (1997).
5. P.Danesh, L.Bedikjan, I.Savatinova, E.Liarokapis, Photoluminescence of porous silicon prepared from crystallized  Si:H films, Journal of Non-Crystalline Solids, Vols.227-230, p.1049 (1998).
6. O.Noblanc, C.Arnodo, S.Cassette, C.Brylinski, A.Kakanakova-Georgieva, Ts.Marinova, L.Kassamakova, R.Kakanakov et al, Physical and electrical characterization of WN Schottky Contacts on 4H-SiC, Materials Science Forum, Vols.264-268, pp.817-820 (1998).
7. L.Kassamakova, R.Kakanakov, N.Nordell et al, Thermostable ohmic contacts on p-type SiC, Materials Science Forum, Vols.264-268, pp.787-790 (1998).
8. L.Kassamakova, A.Kakanakova-Georgieva, R.Kakanakov, Ts.Marinova, I.Kassamakov et al, Thermostable Ti/Au/Pt/Ti Schottky contacts on n-type 4H-SiC, Semiconductor Science and Technology, Vol.13, pp.1025-1030 (1998).
9. L.Bedikjan, P.Danesh, Photoluminescence spectra of porous silicon versus anodization conditions, ”Future Direction in Thin Film Science and Technology”, World Sci.Publ.Comp. Singapur 1998, ed J.M.Marshall et al., p.357.
10. L. Kassamakova, R. Kakanakov, I. Kassamakov, N. Nordell et al, Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures, IEEE Transaction on Electron Devices, Vol.46, pp.605-611 (1999).
11. M.Milanova, A.Mintairov, V.Rumyantsev, K.Smekalin, Spectral Characteristics of GaAs Solar Cells Grown by LPE, Journal of Electronic Materials, Vol.28, No1, p.35 (1999).
12. L. Kassamakova, R. Kakanakov, N. Nordell et al, Study of electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC depending on annealing conditions, Materials Science and Engineering, B56, pp.291-295 (1999).
13. A.Kakanakova, L.Kassamakova, Ts.Marinova, R.Kakanakov, O.Noblanc et al, Interface chemistry of WN/4H-SiC structures, Applied Surface Science, Vol.151, pp.225-232 (1999).
14. N.Dobrinska, Transition Layers Interface upon the Galvanomagnetic Properties of Epitaxial GaAs Hall Generators, Electr.Technology, Vol.32, No 1/2, pp.177-181 (1999).
15. L. Kassamakova, R. Kakanakov, I. Kassamakov, N. Nordell et al, AlSi Ohmic Contacts to p-type 4H-SiC for Power Devices, Materials Science Forum, Vols.338-342, pp.1009-1012 (2000).
16. M.Milanova and V.Khvostikov, Growth and Doping of GaAs and AlGaAs Layers by Low-temperature LPE, Journal of Crystal Growth, Vol.19, No3, p.193 (2000).
17. R. Kakanakov, L. Kasamakova, I.Kasamakov et al, Improved Al/Si ohmic contacts to p-type 4H-SiC, Materials Science and Engineering, B80, pp.374-377 (2001).
18. L.Kassamakova, R.Kakanakov, I. Kassamakov et al, Origin of the excellent thermal stability of Al/Si-based ohmic contacts to p-type LPE 4H-SiC, Materials Science Forum, Vols.353-356, pp.251-254 (2001).
19. R.Kakanakov, L.Kassamakova, N. Hristeva, G. Lepoeva et al, Reliable ohmic contacts to LPE p-type 4H-SiC for high power p-n diode, Materials Science Forum, Vols.389-393, p.917 (2002).
20. L. Kassamakova, R. Kakanakov, R.Yakimova et al, Effect of the temperature treatment on Au/Pd Schottky contact to 4H-SiC, Materials Science Forum, Vols.389-393, pp.929-932 (2002).
21. L. Kolaklieva, R. Kakanakov, N. Hristeva, G. Lepoeva et al, Pd-based ohmic contacts to LPE 4H-SiC with improved thermal stability, Materials Science Forum, Vols.433-436, p.713 (2003).
22. L. Kolaklieva, R.Yakimova, R.Kakanakov et al, Characteristics of Ni Schottky contacts to compensated 4H-SiC layers, Materials Science Forum, Vols.433-436, pp.709-712 (2003).
23. N.Kuznetsov, D. Bauman, A. Gavrilin, L.Kasamakova-Kolaklieva, R.Kakanakov, G.Sarov, T.Cholakova et al, 4H-SiC PN Diode Groun by LPE Method for High Power Applications, Materials Science Forum, Vols.433-436, pp.867-870 (2003).
24. G.Sarov, R. Kakanakov, T.Cholakova, L.Kasamakova-Kolaklieva, N.Christeva, G.Lepoeva, P.Filipova et al, Reliability of 4H-SiC P-N Doides on LPE Grown Layers, Materials Science Forum, Vols.433-436, pp.929-932 (2003).
25. V. Andreev, M. Milanova, V. Khvostikov, GaAs and AlGaAs photodiodes for ionizing radiation detectors, Solid State Electronics, Vol.47, pp.1835-1841 (2003).
26. P.Terziyska, C. Blanc, J.Pernot et al, Evaluation of MESFET structure from temperature-dependent Hall effect measurements, Physica Status Solidi (a) Vol.195, No1, pp.243-247 (2003).
27. P. Terziyska, J. Pernot, S. Contreras et al, Transport investigation of low – nitrogen – doped 6H - SiC: Ion implantation vs. in situ doping, Material Science Forum, Vols.433-436, p.399 (2003).
28. R. Kakanakov, L. Kasamakova – Kolaklieva, N. Hristeva, G. Lepoeva et al, High temperature and high power stability investigation of Al-based ohmic contacts to p-type 4H-SiC, Materials Science Forum, Vols.457-460, 877-880 (2004).
29. A. Sirkin, V. Dimitriev, V. Soukhoveev, M. Myhboeka, R. Kakanakov et al, 4H-SiC Power Schottky diodes. On the way to solve size limiting issues, Materials Science Forum, Vols.457-460, pp.985-988 (2004).
30. T. Karppinen, I. Kassamakov, E. Hæggström, J. Stor-Pellinen, Measuring paper wetting processes with laser transmission, Measurement Science and Technology, Vol.15, 7, pp.1223-1229 (2004).
31. V. Lundin, E. Zavarin, A. Besulkin, A. Gladyshev, A. Sakharov, M. Kokorev, N. Shmidt, A. Tsatsul’nikov, N. Ledenkov, Zh. Alferov, R. Kakanakov, MOCVD-Grown AlGaN/GaN heterostructures with high electron mobility, Semiconductors, Vol.38,11, pp.1323-1325 (2004).
32. G. Sarov, T. Cholakova, R. Kakanakov, P-n junction periphery protection of 4H-SiC power p-i-n diodes using epitaxy and dry etching, Mater.Science Forum,Vols.457-460, pp.1005-1008 (2004).
33. L. Kolaklieva, L. Storasta, I.G.Ivanov et al, Temperature-dependent Hall effect measurements in low - compensated p-type 4H-SiC, Materials Science Forum, Vols.457-460, pp.677-680 (2004).
34. E. Bogdanova, A. Volkova, A. Cherenkov, A. Lebedev, R. Kakanakov, L. Kolaklieva, G. Sarov, T. Cholakova et al, An 4H-SiC p-i-n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD, Semiconductors, Vol. 39, 6, pp. 730-733 (2005).
35. S. Blanque, J. Lyonnet, J. Camassel, R. Perez, P. Terziyska et al, Homogeneity of nitrogen and phosphorus co-implants in 4H-SiC: Full wafer scale investigation, Materials Science Forum, Vols. 483-485, p.645 (2005).
36. G. Sarov, T. Cholakova, R. Kakanakov, The reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection, Materials Science Forum, Vols. 483-485, pp. 769-772 (2005).
37. L. Kolaklieva, R. Kakanakov, Ts. Marinova, G. Lepoeva, Effect of the metal composition on the electrical and thermal properties of Au/Pd/Ti/Pd contacts to p-type SiC, Materials Science Forum, Vols. 483-485, pp.749-752 (2005).
38. T. Karppinen, I. Kassamakov, J. Aaltonen et al, Measuring liquid penetration in the thickness direction of paper, European Physical Journal - Applied Physics, Vol.32, p. 65–71 (2005).
39. K. Bunkowski, I. Kassamakov, J. Krolikowski et al, Radiation tests of CMS RPC muon trigger electronic components, Nuclear Instruments and Methods in Physics Research A, Vol.538, pp.708–717 (2005).
40. S. Blanque, R. Perez, J. Lyonnet, P. Terziyska et al, Full wafer size investigation of N+ and P+ co-implanted layers in 4H-SiC, Physica Status Solidi (a), Vol.202, 4, pp.698-704 (2005).
41. E. Bogdanova, А. Volkova, А. Cherenkov, А. Lebedev, R. Kakanakov, L. Kolaklieva, G. Sarov, Т. Cholakova et al, 4H-SiC p-i-n diode obtained by combination of the physical epitaxy and CVD, Fizika i Teknika Poluprovodnikov, Vol.39, 6, pp.762-766 (2005).
42. А. Tsatsulnikov, A. Saharov, R. Kakanakov, High electron mobility AlGaN/GaN heterostructures grown by MOCVD, Semiconductors, 39 (2005).
43. Z. Radivojevic, I. Kassamakov, M. Oinonen et al, Transient IR imaging of light and flexible microelectronic devices, Microelectronics and Reliability, 46, pp. 116–123 (2006).
44. I.Kassamakov, H. Seppänen, M. Oinonen et al, Scanning White Light Interferometry in Quality Control of Single-Point Tape Automated Bonding, Journal of Lightwave Technol. 08791(2006).
45. M.Milanova, P.Terzyska, Low temperature LPE growth from Ga-As-Bi solution, Thin Solid Films, Vol. 500, 1-2, pp.15-18 (2006).
46. P. Luukka, T. Lampén, L.A. Wendland, S. Czellar, E. Hæggström, J. Härkönen, V. Karimäki, I. Kassamakov et al, Test beam results of a proton irradiated Czochralski silicon strip detector, Nuclear Instruments and Methods in Physics A, Vol.568, pp.72 – 77 (2006).
47. M. Bregant, O. Borysov, L. Bosisio, P. Camerini, G. Contin, F. Faleschini, E. Fragiacomo, N. Grion, G.-V. Margagliotti, S. Piano, I. Rachevskaia, R. Rui, A.P. de Haas, R. Kluit, P.G. Kuijer, G.J.L. Nooren, C.J. Oskamp, A.N. Sokolov, A. van den Brink, F. Agnese, D. Bonnet, O. Clausse, M. Imhoff, C. Kuhn, F. Littel, J.R. Lutz, S. Plumeri, M.H. Sigward, C. Wabnitz, V. Zeter, M. Oinonen, J. Aaltonen, I. Kassamakov et al, The ALICE vertex detector: Focus on the micro-strip layers, Nuclear Instruments and Methods in Physics A, Vol.569, pp.29–32 (2006).
48. M. Bregant, O. Borysov, L. Bosisio, P. Camerini, G. Contin, F. Faleschini, E. Fragiacomo, N. Grion, G.-V. Margagliotti, S. Piano, I. Rachevskaia, R. Rui, A.P. de Haas, R. Kluit, P.G. Kuijer, G.J.L. Nooren, C.J. Oskamp, A.N. Sokolov, A. van den Brink, F. Agnese, D. Bonnet, O. Clausse, M. Imhoff, C. Kuhn, F. Littel, J.R. Lutz, S. Plumeri, M.H. Sigward, C. Wabnitz, V. Zeter, M. Oinonen, J. Aaltonen, I. Kassamakov et al, Assembly and validation of the SSD silicon micro strip detector of ALICE, Nuclear Instruments and Methods in Physics A, Vol.566, p.18 (2006).
49. J. Härkönen, E.Tuovinen, P. Luukka, I. Kassamakov et al, Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors, Nuclear Instruments and Methods in Physics A, Vol.583, pp. 71–76 (2007).
50. V. Eremin, J. Härkönen, P. Luukka, Z. Li, E. Verbitskaya, S. Väyrynen, I. Kassamakov, The operation and performance of Current Injected Detector (CID), Nuclear Instruments and Methods in Physics A, Vol.581, pp. 356–360 (2007).
51. R. Schäfer, H. Seppänen, I. Kassamakov et al, Monitoring the Quality of Bond Connections by applying Statistical Modelling to Scanning White Light Interferometry Data, Microelectronic Engineering, 84, pp. 2757–2768 (2007).
52. S. Väyrynen, P. Pusa, P. Sane, P. Tikkanen, J. Räisänen, K. Kuitunen, F. Tuomisto, J. Härkönen, I. Kassamakov et al, Setup for irradiation and characterization of materials and Si particle detectors, Nuclear Instruments and Methods in Physics A, Vol.572, pp. 978–984 (2007).
53. I.Kassamakov, H. Seppänen et al, Scanning white light interferometry in quality control of single-point Tape Automated Bonding, Microelectronic Engineering, 84, pp.114–123 (2007).
54. L.Kolaklieva, R. Kakanakov, I. Avramova, Ts. Marinova, Nanolayered Au/Ti/Al Ohmic Contacts to P-Type SiC: Electrical, Morphological and Chemical Performances Depending on the Contact Composition, Materials Science Forum, Vols.556-557, pp.725-728 (2007).
55. A. Tsatsulnikov, A. Saharov, R. Kakanakov, High Electron Mobility GaN/AlN/ AlGaN/AlGaN: Si/GaN Heterostructures, Semiconductors, 41 (2007).
56. M. Milanova , P. Sveshtarov, R. Kakanakov et al, Preparation and characterization of multilayer AlGaAs/GaAs structures for photovoltaic application, Journal of Physics, 113 (2008).
57. I. Kassamakov, K. Hanhijärvi, J. Aaltonen, E. Hæggström, LED-based Stroboscopic Schlieren System, Journal of the Acoustical Society of America, Vol.123, No 5, p.3286 (2008).
58. N. Petkov, A New Approach for Adaptive Tuning of PI Controllers. Application in Cascade Systems, Information Technologies and Control, No1, pp.19 – 26 (2008).
59. B.Arnaudov, D.Domanevski, S.Evtimova, Ch.Ivanov, R.Kakanakov, Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers, Microelectronics Journal, Vol.40, No 2, pp.346-348 (2008).
60. M. Milanova, R. Kakanakov, G. Koleva et al, Incorporation of nitrogen in melt grown GaAs, Journal of Optoelectronics and Advanced Materials, Vol.11. No10, pp.1471-1474 (2009).
61. P. Ivanov. P. Vitanov, E. Goranova, M. Milanova, R. Kakanakov et al, Optimization of AlGaAs/GaAs solar cells by numerical modeling, Journal of Optoelectronics and Advanced Materials, Vol.1, No3, pp.238-242 (2009).
62. L. Kolaklieva, R. Kakanakov , P. Stefanov, V. Cimallaet al, Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions, Materials Science Forum, Vols.615-617, pp.951-954 (2009).
63. I. Kassamakov, K. Hanhijärvi, I. Abbadi et al, Scanning white light interferometry with a supercontinuum source, Optics Letters, Vol.34, No.10, pp.1582-1584 (2009).
64. S. Väyrynen, J. Räisänen, P. Tikkanen, I. Kassamakov et al, Breakdown of silicon particle detectors under proton irradiation, Journal of Applied Physics, Vol.106, p.104914 (2009).
65. L. Sainiemi, K. Grigoras, I. Kassamakov et al, Fabrication of thermal microbridge actuators and characterization of their electrical and mechanical responses, Sensors & Actuators A: Physical, Vol.149, pp.305–314 (2009).
66. S. Väyrynen, J. Räisänen, P. Tikkanen, I. Kassamakov et al, Effects of activation by proton irradiation on silicon particle detector electric characteristics, Journal of Applied Physics, Vol.106, p.24908 (2009).
67. L. Kolaklieva, R. Kakanakov, Ohmic Contacts for High Power and High Temperature Microelectronics, in ”Micro Electronic and Mechanical Systems”, Ed. Kenichi Takahata,
68. P. Shindov, R. Kakanakov, L. Bedikyan et al, Investigation of pulsed laser annealing and thermal annealing of CdS layers designed for thin layer solar cells, Journal of Solid State Phenomena, Vol.159, pp.109-112 (2010).
69. R. Kakanakov, Hr. Bahchedjiev, L. Kolaklieva, T. Cholakova, S. Evtimova, E. Polyhroniadis et al, Investigation of ZrN hard coatings obtained by cathodic arc evaporation, Journal of Solid State Phenomena, Vol.159, pp.113-116 (2010).
70. M. Milanova, R. Kakanakov, G. Koleva et al, High-quality GaInAsSb and GaAlAsSb layers for thermophotovoltaics grown by Liquid-Phase Epitaxy, Journal of Solid State Phenomena, Vol. 159, pp. 87-90 (2010).
71. L. Kolaklieva, R. Kakanakov, V. Chitanov, P. Dyulgerova, V. Cimalla, Search for a suitable Ohmic metallization scheme to GaN/AlGaN heterostructures for sub-micron devices, Journal of Solid State Phenomena, Vol. 159, pp.81-86 (2010).
72. A. Parshuto, V. Chitanov, L. Kolaklieva, R. Kakanakov, Mathematical modelling the power supply-load system for electro discharge polishing process, Journal of Solid State Phenomena, Vol.159,(2010).
73. S. Väyrynen, J. Härkönen, E. Tuominen, I. Kassamakov et al, The effect of an electrical field on the radiation tolerance of Float Zone and Magnetic Czochralski silicon particle detectors, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol.637, 2011, Iss.1, pp.95-99.
74. L. Spiegel, T. Barvich, B. Betchart, S. Bhattacharya, S. Czellar, R. Demina, A. Dierlamm, M. Frey, Y. Gotra, J. Härkönen, F. Hartmann, I. Kassamakov et al, Czochralski Silicon as a Detector Material for S-LHC Tracker Volumes, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol.628, 2011, Iss. 1, pp. 242-2451.
75. M. Milanova, P. Vitanov, Dilute Nitride CaAsN and InGaAsN layers Grown by Low-Temperature Liquid- Phase Epitaxy, in book Solar cells: New Aspects and Solutions, edited by L.A. Kosyachenko, Published by InTech, 2011, pp 69-94.
76. M. Milanova, P. Vitanov, M. Sendova-Vassileva, G. Koleva, G. Popov, Low-temperature LPE growth and characterization of InGaAsN thick layers, Energy Procedia, 2011, Vol. 10, pp.220-224.

IІ. Публикации в български списания:

1. G. Sarov, R. Kakanakov, L. Kassamakova, T. Cholakova, High power, high temperature SiC electronics, University of Plovdiv, Scientific Works – Physical Sciences, Vol.34, No 4 (2001).
2. G. Sarov, Preparation of Clean SiC Surface by Photochemical Oxidation, University of Plovdiv, Scientific Works – Physical Sciences, Vol.34, No 4 (2001).
3. M. Neshev, L. Bedikian, T. Cholakova, Chr. Bahchedjiev, Thermoelectric Modules and Devices, University of Plovdiv, Scientific Works – Physical Sciences, Vol.34, No 4, p.109 (2001).
4. Ya.Cartelov, M. Neshev, Chr. Bahchedjiev, L. Bedikjan, T. Cholakova, Тhermotechnical parameters on thermoelectric cooling aggregates design, Тhermotechnics, Vol.6, No 4 (2003).
5. М. Neshev, L.Bedikian, Chr.Bahchedziev, Т. Cholakova, Thermoelectric cooling-heating aggregates, News of Bulgarian Academy of Sciences, No 9, p.4 (2004).
6. R. Kakanakov, G. Sarov, L. Kassamakova, Т. Cholakova, High power, high voltage and high temperature SiC diodes, News of Bulgarian Academy of Sciences, No1, p.4 (2004).
7. R. Kakanakov, Equipment for cathodic arc deposition of thin films and hard coatings, Information bulletin of Bulgarian Academy of Sciences, No10 (2005).
8. P. Vitanov, E. Goranova, M. Milanova, Solar cells technology on the base of III-V heterostructures, Advances in Bulgarian Sciences, No1 (2006).
9. V. Chitanov, Temperature Schemes with Fuzzy Model Predictive Control for Polymer Reactor, Materials, Methods and Technology, Scientific Articles, pp.148-155 (2007).
10. P. Vitanov, M. Milanova, E. Goranova, Solar cells technology on the base of III-V heterostructures, Advances in Bulgarian Science, No1, pp.7-11 (2008).
11. P. Shindov, R. Какаnakоv, L. Bedikyan, Т. Аtanasovа, Kinetics of CdS Thin Layers Deposition Obtained by Pulverization with Following Spray Pyrolysis, Electrotechnics & Electronics, No11-12 (2009).
12. M. Neshev, L. Bedikyan, St. Zachariev, M. Zacharieva, Thermoelectric generator modules as an alternative source of electric energy, Electrotechnics & Electronics, No 7-8, p.51 (2010).
13. St. Zahariev, L. Bedikyan, P. Shindov, M. Zacharieva, T. Cholakova, R. Kakanakov, Deposition and Optical Properties of TiO2 Thin Films, Annual J. of Electronics, 2011, pp.191-193.